Transistor BC547

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC546/547/548/549/550
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
h
FE Classification
Symbol Parameter Value Units
V
CBO Collector-Base Voltage : BC546
: BC547/550
: BC548/549
80
50
30
VVV
V
CEO Collector-Emitter Voltage : BC546
: BC547/550
: BC548/549
65
45
30
VVV
V
EBO Emitter-Base Voltage : BC546/547
: BC548/549/550
65
VV
I
C Collector Current (DC) 100 mA
P
C Collector Power Dissipation 500 mW
T
J Junction Temperature 150 °C
T
STG Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO Collector Cut-off Current VCB=30V, IE=0 15 nA
h
FE DC Current Gain VCE=5V, IC=2mA 110 800
V
CE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
I
C=100mA, IB=5mA
90
200
250
600
mV
mV
V
BE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA
I
C=100mA, IB=5mA
700
900
mV
mV
V
BE (on) Base-Emitter On Voltage VCE=5V, IC=2mA
V
CE=5V, IC=10mA
580 660 700
720
mV
mV
fT
Current Gain Bandwidth Product V
CE=5V, IC=10mA, f=100MHz 300 MHz
C
ob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
C
ib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
NF Noise Figure : BC546/547/548
: BC549/550
: BC549
: BC550
V
CE=5V, IC=200µA
f=1KHz, RG=2KΩ
V
CE=5V, IC=200µA
R
G=2KΩ, f=30~15000MHz
2
1.2
1.4
1.4
10
443
dB
dB
dB
dB
Classification A B C
h
FE 110 ~ 220 200 ~ 450 420 ~ 800
BC546/547/548/549/550
Switching and Applications
• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC546/547/548/549/550
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Transfer Characteristic
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product
0 2 4 6 8 10 12 14 16 18 20
0
20
40
60
80
100
I
B = 50µA
I
B = 100µA
I
B = 150µA
I
B = 200µA
I
B = 250µA
I
B = 300µA
I
B = 350µA
I
B = 400µA
I
C[mA], COLLECTOR CURRENT
V
CE[V], COLLECTOR-EMITTER VOLTAGE
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.1
1
10
100
f=1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE = 5V
fT
, CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC546/547/548/549/550
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25 –0.15
0.38 +0.10 –0.05
0.38 +0.10 –0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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CORPORATION.
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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